左和右电荷存储区都具有半导体衬底上的薄氧化物层、薄氧化物层上的氮化物层和氮化物层上的绝缘氧化物层。

Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.

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焊接加工时热影响区氮化物析出是固溶氮的一种主要损失方式。

Nitride precipitation is the primary type of nitrogen loss in the heated affected zone during welding process.

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