在第二部分，我们采用第一部分所选的变分波函数和得到的束缚能进一步计算了类氢杂质体系的光致电离截面。
In the second part, using the wave function and binding energy obtained from the first part, the photoionization cross-section of the impurity is calculated.
本工作计算了电子与类氢的铀离子碰撞截面随能量的变化，研究了在共振能量附近，DR和RR过程的干涉。
This work focus on the calculation of the cross-section of the electron-hydrogen like Uranium collision. The interference effect of DR and RR was investigated near the resonant energy.
本文应用X射线透射截面形貌技术研究了氢气区熔硅单晶中氢致缺陷与热处理温度的关系。
The relationship between the annealing temperatures and the hydrogen-induced defects in floating zone silicon grown in hydrogen atmosphere has been investigated by X-ray section topography.
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