最后，给出了用本法对两种正性电子抗蚀剂选择最佳曝光剂量的结果和制作的大规模集成电路掩模版的照片。
Finally, the results of selecting the optimum exposure dose for two kinds of electron positive resists and the photos of LSI masks fabricated by this method are given.
本文综述了酚醛重氮萘醌正性抗蚀剂的溶解抑制机理，主要包括（1）分子间氢键作用机理；
The mechanisms of dissolution inhibition of positive photoresist based on novolak(NVK)-diazonaphthoquinone(DNQ), including(1) the molecular hydrogen bonding interactions between novolak and DNQ;
根据本发明可提供能够适用于排出喷嘴式的抗蚀剂涂布法的正型光致抗蚀剂组合物。
The positive photoresist composition which is suitable for used in a resist coating method by a discharge nozzle system can be provided according to the invention.
应用推荐