源-测量单元还可以测量其它的二极管参数，包括正向电压降和击穿电压。
The Source-Measure Unit can also test other diode parameters, including forward voltage drop and breakdown voltage.
本文讨论了低温下P - N结的正向电压降v _ F随温度t变化的特性。
The temperature behavior of the forward voltage VF of the P-N junction is discussed.
本文对大功率可控硅的阻断电压问题、正向压降问题、光刻掩模板的设计问题、控制极特性问题以及动特性问题进行了分析。
This paper analyses the blocking voltage, forward voltage drop, photoresist mask design and gate-triggering and dynamic characteristics of high-power thyristors.
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