另外，形成一栅极材料层于绝缘层上。
Furthermore, a grid material layer is formed on the insulation layer.
在一种沟槽栅极型MIS器件中，在沟槽中形成与栅极的接触，从而消除了使栅极材料，通常为多晶硅，延伸至沟槽外的需要。
In a trench-gated MIS device, contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench.
电光聚合物材料通常采用带栅极的电晕极化技术进行处理。
The electro-optic polymer material is usually poled by corona poling technique with a grid.
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