传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
解决上述问题的方法是自动控制输出电路MOS管的栅极电压变化率。
This problem can be solved by controlling the variety speed of the G-S(grid-source) voltage of MOS transistors.
将通道外伸、三面围以栅极原子，这样就能够增加栅极的表面积，更好地控制通道，并减少泄漏。
By sticking the channel into the air and surrounding it on three sides with the atoms of the gate, you increase the surface area of the gate.
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