电子密度梯度直接影响密度涨落，并通过杂质辐射与温度涨落相互耦合，进而影响静电势涨落。
During the impurity radiation, the density perturbation driven by density gradient couples with the temperature one and then affects the electrostatic potential one.
首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
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