...完美的光子晶体才可能拥有绝对能隙，但就应用的角色来看，科学家们对不完美的光子晶体更感兴趣，原因就在杂质态(impurity state)的概念。
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Ga1-xAs heteroj unctions show that the impurity state binding energy increases obviously as the increase of the magnetic field strength.
结果表明：杂质态结合能随磁场强度的增大而显著增大。
参考来源 - 磁场下实际半导体异质结势中界面杂质态和束缚极化子及压力效应·2,447,543篇论文数据，部分数据来源于NoteExpress
结果表明：杂质态结合能随磁场的增强而显著增大。
It is found that the impurity binding energy increases obviously with the magnetic field.
利用变分法研究纤锌矿结构氮化物半导体材料中的浅杂质态问题。
The shallow impurity states in wurtzite nitrides are studied by a variational method.
结果表明杂质态结合能不只是量子线半径的函数，它还随杂质位置，外电场强度发生变化。
The results show that the binding energies of shallow donor impurity states strongly depend not only on the wire radius, but also on the applied electric field and the impurity position in the wire.
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