Based on the process optimization of the active layer materials,thermal evaporation and conventional silicon integrated circuit process were combined to fabricate OFET and the device’s characteristics are studied in this paper.
本论文在对有机场效应管有源层材料生长工艺进行优化的基础上,用真空热蒸发结合硅集成电路工艺的方法制备了有机场效应管,研究了器件的场效应性能。
参考来源 - 有机场效应管的制作及特性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
确保你的有源层是'栅格2 '。
该器件带有光波导结构并具有适当掺杂和有源层厚度。
These devices have optical waveguide structure, moderate doping level and active layer thickness.
厚的无应变层的引入主要是为了改善有源层晶体质量，获得大的偏振不灵敏模式增益。
Unstrained layer induced is primarily used to enhance the polarization insensitive mode gain and improve the active region crystal quality.
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