分析计算了铁心、低压绕组、高压绕组的温升特性及整体温度分布和最热点位置。
The temperature rise characteristics of core, LV coil and HV coil, as well as whole temperature distribution and the location of the heatest spot were analysed and calculated.
测试过程中要连续监测MOV表面最热点的温度。
During the test, the surface temperature on the hottest spot of the MOV must be monitored continuously.
实验结果表明，在考虑热约束的布局结果中，芯片上各点的温度分布均匀，最热点的温度显著降低，而芯片面积的增加却很少。
The experimental results show that the thermal distributed evenly and the temperature of the "hot spots" decreased greatly in the chip.
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