据此理论模型研制成功了电流增益温度特性优良的中小功率晶体管系列。
Based on the theoretical model, a new type of the transistor with low temperature coefficient of the current gain has been manufactured successfully.
我们的射频功率晶体管系列主要取代了摩托罗拉，飞利浦，汤姆逊和SGS的。
Our line of RF power transistors primarily replaces those from Motorola, Philips, and SGS Thomson.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
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