在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。
Based on the orthodox theory, a model of a single electron transistor (SET) of metallic tunneling junctions is built using the master equation method.
本文对双极性微波功率晶体管(以下简称微波功率晶体管)求解了稳态工作条件下的三维热传导方程。
The three-dimensional heat conduction equation for steady state operating conditions of bipolar microwave power transistors has been solved.
本文推导了用电路参数表示的晶体管一维直流电流—电压方程。
In this paper, the transistor one dimensional DC current-voltage equation which is indicated as circuit parameters is derived.
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