采用无电镀沉积技术在经过机械抛光的单晶硅衬底上沉积了铜纳米晶。
Copper nanocrystallites were deposited on mechanically polished single crystal silicon (sc-Si) wafers by electroless deposition method.
本发明同现有技术相比，工艺简单，所得碳化硅烧结坯致密度高，无游离硅残留，强度与韧度较高。
Compared with prior art, the process is simple, and the obtained SiC sintered compact has high density, no residue of free silicon and high strength and toughness.
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