属于半导体物理学专有名词。 散射几率：表示单位时间内一个载流子受到辐射的次数，其数值与散射机构有关。其倒数为平均自由时间。
得出离子的平均自由时间的数值等于散射几率的倒数；
The value of average ionic freedom time is equal to the reciprocal of scattering probability.
对于0 0 0 2的非弹性碰撞入射原子约化质量增大，大角散射几率增大。
For 00 02 inelastic collision, scattering at the large Angle keep pace with the increase of reduce mass of incident atom.
本文主要研究应变硅空穴各机制散射几率及空穴迁移率与晶向、应力的理论关系。
The main work is focused on models of hole scattering mechanisms and hole mobility which is related to the crystal orientations and stress of strained Si.
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