图7描绘多状态装置中关于从经擦除状态到经编程状态的直接编程的阈值电压分布的示范性集合。

FIG. 7 depicts an example set of threshold voltage distributions in a multi-state device with direct programming from the erased state to a programmed state.

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图8描绘多状态装置中关于从经擦除状态到经编程状态的双通过编程的阈值电压分布的示范性集合。

FIG. 8 depicts an example set of threshold voltage distributions in a multi-state device with two-pass programming from the erased state to a programmed state.

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图14描绘施加于循环存储器装置的编程脉冲。

FIG. 14 depicts programming pulses applied to a cycled memory device.

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