本文叙述了通过自动电化学c - V剖面图技术，在宽的掺杂和深度范围内，载流子浓度纵向分布的测量。
The measurement of carrier concentration profiles over a wide range of doping le-vels and depths by using automatic electrochemical C-V profiling technique is described.
激光掺杂存在一个阈值能量密度。掺杂浓度和深度的分布与预热温度和杂质镀层厚度有关。
It is found that there is a threshold energy density in laser doping, and distributions of dopant density and depth have relation to preheat temperature and plating layer thickness of the impurities.
本文通过对不同掺杂浓度的样品进行刻蚀，发现重掺杂的样品刻蚀出的孔在深度和孔径上都比中度掺杂的大。
It is found that pore's depth and diameter on n-InP with heavily doped concentration is larger than moderately doped samples.
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