本文提出了一种新的半导体掺杂方法。
A new method for impurity doping of semiconductor has been developed.
利用钴，镍掺杂方法制备钼酸铋气敏材料。
Bismuth molybdate gas sensor materials doped with cobalt and nickel were prepared respectively.
一种新的冷发射电子束掺杂方法已研究成功。
A new method for doping by cold emitting electrons beam has been developed.
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