“通过设计掺杂物的性质,形状和密度,你可以获得一些,在整体性质上,在自然界中不同寻常而且难以得到的东西。”Engheta说。
"By designing the properties of the inclusions, as well as their shapes and density, you achieve in the bulk property something that may be unusual and not readily available in nature," Engheta said.
激光掺杂存在一个阈值能量密度。掺杂浓度和深度的分布与预热温度和杂质镀层厚度有关。
It is found that there is a threshold energy density in laser doping, and distributions of dopant density and depth have relation to preheat temperature and plating layer thickness of the impurities.
提出一种计算掺杂半导体中孤立杂质能级的方法,该方法建立在密度函数理论基础之上。
Basing on the density-functional theory, the paper presents a method of calculating the isolated impurity levels in doped semiconductors.
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