本文提出的中子掺杂硅单晶旋转辐照模型，给出了热中子通量在硅断面上的分布．平均值和不均匀度。
The rotating irradiation model for ND silicon presented in this paper gives distribution, mean value and heterogeneity of the thermal flux on the cross section of silicon.
研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。
The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.
利用降温法生长掺尿素的U TGS 单晶，测试了晶体的热释电和介电特性。结果表明，尿素的掺杂提高了晶体的热释电性能。
TGS crystals doped with urea have been grown from aqueous solution. The pyroelectric properties of UTGS crystals are determined. The results show that UTGS has better pyroelectric properties.
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