又掺杂剂在膜表面分布均匀程度与掺杂时间有关。
The spread uniformity of the dopant in the film surface will vary with the doping time.
该方法包括用第一类型掺杂剂掺杂硅层并且执 行第一注入工艺以便在硅层中注入与第一类型相反的第二类型的掺 杂剂。
The method includes doping a silicon layer with a first type of dopant and performing a first implant process to implant dopant of a second type opposite the first type in the silicon layer.
掺杂聚乙炔的电导率随掺杂剂与聚乙炔链之间电荷转移量的增大而增大。
The conductivity of doped PA increases as the increase of the amount of charge transfer between the dopant and the PA chain.
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