接着用填充材料填入掩模图案周围的间隔形成填料塞。
A filler material is next used to fill in the space around the masking patterns and to form filler plugs.
图中间的透镜起缩小掩模图案的作用，使得在晶圆上得到的电路图案长度上是掩模的四分之一。
A lens (middle) reduces the mask's image. So what gets printed on the wafer is typically four times smaller linearly than the mask's pattern.
同时限制在掩模图案的光刻增加步骤以三个或更少，甚至没有施加的MTP规格为写入时间提高了新工艺的性能。
Applying MTP specifications for write times improves the new process's performance while limiting increased steps in mask pattern lithography to three or fewer, and even none.
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