在中子损耗机制方面，那是，那是有意义的，这些是一些能够比较的参数。
In terms of neutron loss mechanisms which are which can be significant, these are some parameters that one could compare.
由衬底损耗机制，讨论了衬底阻抗、氧化层电容和衬底有效介电常数对滤波性能的影响。
Increasing the substrate resistance and reducing the substrates' oxide thickness and coupled capacitances make a reduction of the substrate loss.
采用标准CMOS工艺在不同soi衬底上制备了微带和微带集成电感器件，分析了CPW和集成电感的损耗机制。
Coplanar transmission lines and integrated inductors are fabricated on different SOI substrates with standard CMOS processes. The attenuation mechanism of the CPW and inductor is analyzed.
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