抛光过程中决定抛光质量的参数有：抛光浆体、抛光温度、抛光时间等。
The parameters deciding the quality in polishing process are as follows: slurry, temperature, wafering time, and so on.
力控制系统对抛光加工性能有重要的影响，直接关系着抛光质量。
It has important effect on polishing performance, and it is directly related to the polishing quality.
目前，CMP的抛光液通常使用纳米级颗粒来加速切除和优化抛光质量。
Currently, the slurries used in CMP usually contain particles at nano scale to accelerate the material remove ratio (MRR) and to optimize the planarity.
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