但由于绝缘埋层的引入，使得材料本身的抗总剂量辐照能力反而不如体硅材料。

But due to an insulating layer in its structure, the tolerance of total dose irradiation of SOI is poorer than normal silicon material.

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为了解决SOI材料的抗辐照总剂量问题，我们提出使用氮氧共注入形成的多埋层SOIM 新结构。

To deal with this problem, we put a new SOIM structure forward as a candidate.

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