国内外制备PIN二极管主要采用离子注入方法，扩散方法，外延方法。

A few methods are introduced at home and abroad on producing PIN diodes: diffusion, ion implantation, and epitaxial.

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采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。

Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.

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变形棱镜组可用来扩散一个方向的光束，可将激光二极管发出的椭圆光进行圆整。

Anamorphic prism pairs are designed to expand a beam in only one dimension, circularizing the elliptical output from a diode.

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