该半导体存储器件包含连接到一对位线的位线感测放大器。
The semiconductor memory device includes a bit line sense amplifier connected to a pair of bit lines.
感测放大器包括第一感测元件和对于第一感测元件是冗余的第二感测元件。
A sense amplifier includes a first sensing element and a second sensing element redundant to the first sensing element.
包含本发明的感测放大器以及只读存储器的存储器装置可降低噪声干扰对只读存储器的输出数据的影响。
The memory device comprising the sensing amplifier and the ROM can reduce the influence of noise interference on the output data of the ROM.
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