结果表明开关的半导体片对照射激光的吸收因子增大了开关的延迟时间，在计算中应该加以考虑。
The results show that the absorption fraction of the semiconductor slab of the switch increases the delay time of switches and should be considered in the calculation.
开关的除了关于延迟时间应该指出的。
通过实验检测了开关的耐压特性以及不同电压下的开关动作延迟时间和抖动。
The delay time and jitter of the switch at different voltages have been measured respectively through tests.
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