由于两个二极管反向并联,所以此电路能够对任何极性的信号进行保护。
With two diodes in parallel back to back, the circuit will provide protection regardless of the signal polarity.
它的关键思想是将改进结构的GTO与反并联二极管和门极驱动电路集成在一起,再与其门极驱动器在外围以低电感方式连接。
Its key idea is that integration of GTO with improved structure, antiparallel freewheeling diode and gate drive circuit, then connects its gate drive by low inductance.
对三电平电路、MOS管并联等进行了研究。
A study was carried out on three-level circuit, MOS in parallel etc.
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