本发明属于微电子器件技术领域，具体为一种形成超薄可控的金属硅化物的方法。
The invention belongs to the technical field of microelectronic devices, in particular to a method for forming ultrathin controllable metal silicide.
本发明属于微电子技术领域，具体公开了一种刻蚀铜的方法。
The invention belongs to the technical field of microelectronics, and in particular discloses a method for etching copper.
本发明公开了一种多阻态电阻随机存储器单元及其制备方法，属于微电子技术领域。
The invention discloses a multi-resistance state resistor random-access memory unit and a preparation method thereof, and belongs to the technical field of microelectronics.
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