...O内部遮蔽OUTSIDE-SHIELD材质(Material)――NO编织构成(Construction）mmNO导体尺寸(Conductors Size)mmNO导体数(Conductors No)%NO填充(Fuller)材质(Material)――NO集合CABLING构成(Composititon)――3F绞距(Pitch)mmNO绞合外径(Diameter)mmNO外部遮蔽OUTSI...
基于12个网页-相关网页
金属氧半导体数组 metal-oxide-semiconductor array
随体导数 [流] material derivative ; substantial derivative
费城半导体指数 SOXX ; Philadelphia Semiconductor Index ; SOX
正温度系数半导体元件 [电子] kaltleiter
体积导数 volume derivative
半导体计数器 semiconductor counter
半导体指数 Semiconductor Index
美国费城半导体指数 PHLX Semiconductor Index
半导体库存指数 DASI
随着扫描圈数的增加，聚合膜的厚度也增加，同时电极由导体向绝缘体转变。
The modified electrode change from conductor to nonconductor with number of circle increased.
在穿透层内有一指数衰减的屏蔽电荷分布，其符号与超导体表面由运动感生的电荷相反、数量相等。
There will be shielding charges in the penetration layer with a exponential distribution. The shielding charge has opposite sign and equal amount to the surface induced charge caused by moving.
导出了电子速度对半导体量子点中强、弱耦合极化子的声子平均数的影响。
The influences of the electronic velocity on the mean number of phonons of the strong-and weak-coupling polaron in a semiconductor quantum dot are derived.
应用推荐