半导体场效应晶体管 Metal-Oxide-Semiconductor Field-Effect Transistor ; MESFET ; MOSFET ; MEtal-Semiconductor Field-Effect-Transistor
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
High mobility P-channel power metal oxide semiconductor field effect transistors.
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
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