In the parasitic resistance model of short channel MOSFETs, the thickness of accumulation layer is assumed to zero, but the error is large at the low Vg.
短沟道寄生电阻模型在计算时假设积累层厚度为零，从而得到积累层电荷计算公式，这在栅压小的时候存在较大的误差。
参考来源 - 纳米MOSFET量子效应模型与寄生电阻分析·2,447,543篇论文数据，部分数据来源于NoteExpress
泄漏电流是由测量电路和附近的电压源之间的寄生电阻通路产生的。
Leakage currents are generated by stray resistance paths between the measurement circuit and nearby voltage sources.
本论文建立了包含电磁现象以及对电感性能有重要影响的寄生电阻和寄生电容的物理模型。
This dissertation presents physical models that address the electromagnetic phenomena and parasitics important to the behavior of on-chip inductors.
对寄生电阻、扩散长度和表面复合速率等影响太阳能电池转换效率的主要因素进行了深入分析。
The main conversion efficiency of solar cell factors such as stray resistance, diffusion length and compound rate were analyzed, too.
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