如上段所述，版图生成后，我们要提取其寄生参数（Parasitic Extraction）（即椭圆圈住的那一步），这其中又包括有器件的寄生参数、衬底 寄生参数和互连线的寄生参数等。
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Systematic analysis of the circuit parasitic parameters effect on line current total harmonic distortion (THD) in different conduction modes was presented.
分析各种模式下电路寄生参数对输入电流谐波畸变的影响。
参考来源 - 寄生参数对有源功率因数校正器电流畸变的影响·2,447,543篇论文数据，部分数据来源于NoteExpress
在这基础上实现了EMI滤波器集成，并提出了几种减小寄生参数的方法。
At last integrated EMI filter is realized and propose several ways to reduce the parasitic parameter.
电路分析中，考虑了磁耦合器件寄生参数的影响，使设计方案更为充分有效。
In the circuit analysis, the paper takes into account the effects of parasitic parameters of the high frequency transformer, which makes the design principle more effective.
重点讨论MOSFET的高频寄生参数，包括栅电阻、衬底电阻、寄生电容等。
The high frequency parasitic effect of MOSFET is emphasis on, included gate resistance, substrate resistance, and parasitic capacitance.
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