金属纳米晶存储器件具有低功耗、高速读写特性及较高的可靠性，因此近年来在非易失存储器研究领域备受关注。
In recent years, in the field of non-volatile memory research, metal nanocrystal memory with low-power, high-speed read and write characteristics and high reliability receives much attention.
动态随机存储器栅极侧壁硅化钨残留造成的短路成为制约提高产品良率及可靠性的瓶颈。
Dynamic random access memory (DRAM) suffers from the bridge issue due to the WSix residue on gate sidewall, which is the bottleneck to enhancing the product's yield and reliability.
研究了系统的程序指令集、逻辑堆栈和I/O存储器数据类型，实验表明系统具有良好的实时性和可靠性。
Program instruction set, logic stack and data type of I/O memory which are tied up with tasks in the soft-PLC system are analyzed and studied.
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