本发明公开了存储器单元阵列，以多行与多列排列。
The invention discloses a memory cell array arranged multiple in rows and lines.
本发明公开了一种位于基底上的电阻式存储器单元和电阻式存储器阵列。
The invention is directed to a resistive memory cell on a substrate and a resistive memory array.
所述存 储器阵列包括M行和N列存储器单元以及列虚设单元。
The memory array includes M rows and N columns of memory cells and a column of dummy cells.
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