结果表明，不采用多孔介质模型计算的气泡的逃逸速度比采用多孔介质模型大，且随着底吹流量的增加，偏差加大。

The results show that when the porous media model is not used, the calculated escape velocity of bubbles is larger, and the difference becomes larger with increasing the gas flow rate.

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本课题利用化学气相沉积(CVD)和热蒸发法在硅片称底和多孔氧化铝(aao)模板上制备纳米硅线。

Silicon nano-wires (SiNWs) were fabricated on Anodized Aluminum Oxide (AAO) template and silicon chips by the Chemical vapor Deposition (CVD) and thermal evaporation method.

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