MOS结构中光注入时外电路电流特性与绝缘膜中陷阱俘获截面密切相关。
The external circuit current of photoinjection in MOS structures is closely related to the capture cross section of traps.
虽然输入偏置电流是这种误差的常见来源，但是外电路产生的电流在源电阻上形成的电压降也能引起误差。
Although input bias current is a common source of this type of error, currents generated by external circuits can also result in errors due to voltage drops across the source resistance.
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