声子发射（Aconstic emission，AE），是指在材料裂纹的端部，随裂纹的扩展，会发射出各种频率的弹性波。
理论研究了非对称双势垒结构中光学声子发射率和光学声子辅助隧穿电流。
The phonon emission rate and the phonon assisted tunneling (PAT) current in an asymmetric double barrier structure are theoretically studied.
通过弹性和非弹性的碰撞，发射纵波光学声子，半导体中发生准。
Thequasi equilibrium relaxation occurs via elastic and inelastic scattering and the emission of longitudinal optical phonon.
根据黄昆等的声子统计分布理论，计算了4.2K和20K下的多声子跃迁几率因式和发射的平均声子数目。
According to the Huang Kun's statistical distribution theory of phonons (1982), the phonon probability factors and the average numbers of phonons at 4.2K and 20K are exactly calculated.
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