在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
这些数据和结果有助于设计和研制自旋场效应晶体管、自旋发光二极管和自旋共振隧道器件等。
These data and results are helpful to design and develop spin field effect transistor, spin light-emitting diode, spin resonant tunneling device, etc.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
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