发射极电流集边效应 emitter current crowding effect
集电极发射极电流增益 collector to base current gain
发射极峰值电流 IEM
发射极截止电流 emitter cut-off current
发射极漏电流 emitter leak current
发射极输入电流 emitter input current
阴极发射电流密度 cathode emission current density
发射极反向电流 emitter reverse current
发射极间的漏电流 Gate-emitter leakage current
这种结构还可以构成横向光晶体管，共发射极电流增益为2 ~ 4倍。
Such MSM structure can also be formed into a transverse phototransistor with its common-emitter current gain from 2 to '4.
将其和晶体管发射极电流方程相结合得到不同偏置下晶体管的热点温度。
And together with the transistor current equations, the hot spots temperature of a transistor under different bias is obtained.
结果表明该电阻与光敏区面积、发射区边长、发射区位置、发射极电流等因素有关。
Results show that the resistance relates to the area of the photo-excited region, the side length of the emitter region, the position of the emitter region, and the emitter current.
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