衬底温度决定原子的表面迁移率，衬底温度是影响淀积的铝膜的均匀性和台阶覆盖能力的主要因素。

Therefore, the substrate temperature was the main factor which obviously affected the atoms distribution and step coverage of Al thin films.

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因此，金刚石单晶体的生长看来既受到太高的碳氢超饱和度的影响，也受到少量原子态氢的影响，还受到生长物质表面迁移率减小的影响。

Thus the growth of diamond single crystals seems to be disturbed either by too high hydrocarbon supersaturation or by less atomic hydrogen or by a decreasing surface mobility of the growth species.

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