本文认为多余载流子的产生来源于中子辐照造成的晶格损伤缺陷，并与原始单晶缺陷有关。
We think that the excess carriers are generated from the lattice damage defects caused by the neutron irradiation, and may be affected by the as-grown defects of FZSi.
沉积的晶体成长是借由原始晶体的晶格结构给与方向。
The growth of the deposited crystal is oriented by the lattice structure of the original crystal.
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