摘要对比了半绝缘多能谷光电导开关中光激发单极畴和耿氏器件中偶极畴的物理机制。
The photon-activated monopole domain in a semi-insulating multi-valley photoconductive semiconductor switch and the dipole domain in a Gunn device are compared.
新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。
The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.
简单极为重要，因为用较少元器件实现（的电路）肯定更便宜也更可靠。
Simplicity is of the essence since the low parts count implementation is invariably cheaper and more reliable.
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