这主要得益于它采用了单晶硅膜的SOI结构。
These benefit from the SOI Monocrystal silicon structure it possesses.
根据模拟结果并结合单晶硅材料和SOI结构的特点，设计出了矩形应力膜单晶硅soi高温压力传感器芯片。
According to the result of simulation and characteristic of monocrystalline silicon SOI structure, a novel high temperature SOI pressure sensor with a rectangle diaphragm was designed.
当少子扩散长度与衬底厚度的比值为2.5-3时，具有铝背场结构的单晶硅电池可获得最佳的输出特性。
When the ratio of minority carriers'diffusion length to the substrate thickness is about 2.5 to 3, the crystalline silicon cells with an Al-BSF can gain the optimal output performance.
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