金属探头与半导体接触时的电阻可能相当高。
The resistance of the metal probe to semiconductor contact can be quite high.
本文评述了金属-半导体接触的各种机理以及这个接触在半导体枝术中的实际应用。
The paper describes the mechanisms of metal-semiconductor contact and the actual applications of this contact in semiconductor technology.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
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