纳米半导体量子点以其所具有的新颖光电性质与输运特性，正在各类量子功能器件中获得成功应用。
Nanometer semiconductor quantum dots have potential application in the novel quantum functional devices because of their unique photoelectric and transport properties.
在此论文中，我们将会呈现在三种同的二族半导体米结构系统其特有的光电性质。
In this thesis we present our studies on the optical and electrical properties of three different II-VI semiconductor nanostructure systems.
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