Firstly, we use DPS plus tool instead of DPS tool in order to increase new etching gas SF_6. Afterwards we improve Etch Rate Selectivity, Uniformity and also improve profile, CD of Spacer, but on the Gate, some Nitride remained.
首先通过更换原刻蚀设备DPS,使用DPS plus(DPS plus比DPS多出3路工艺气体管路),从而可以增加新的刻蚀气体SF_6,提高刻蚀速率选择比和刻蚀速率均匀性,改善Spacer的形状及线宽,但是没能将Spacer栅极上方残余的氮化硅去除。
参考来源 - 0.18微米侧壁（Spacer）干法刻蚀工艺的开发与优化·2,447,543篇论文数据，部分数据来源于NoteExpress
结果表明，刻蚀速率与刻蚀气体的混合比率呈现非单调特性。
Results indicate that etching rates of BST thin films present non-monotonic dependence on mixing ratio of etching gases.
用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。
The optical emission spectrum of r. f. plasma during amorphous silicon based film etching in CF4 gas is detected.
结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响，而气体流量影响不大。
The results show that the etching rate depends strongly on plasma composition and the RF bias voltage, but rather weakly on the gas flow rate.
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