根据色分离光栅的实际制作过程建立了包含对位误差、占空比误差、刻蚀深度误差、塌边误差等多种制作误差的色分离光栅加工误差模型。
According to the practical fabrication process of CSG, a comprehensive fabrication error model of CSG including alignment error, duty cycle error, depth error and stair slope error is built up.
论文在分析过刻蚀和欠刻蚀对IC版图影响的基础上，提出了基于工艺偏差影响的IC关键面积计算新模型和实现方法。
The influence on over etching and under etching to IC layout is analyzed, the computation model and realization method of IC critical area are presented.
结合自锐效应模型，得到了（100）硅片刻蚀针尖自锐条件。
Simultaneously, the self-sharpening conditions of the tip on(100) silicon wafers were obtained by the self-sharpening model.
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