在湿法刻蚀诱导坑时，需适当延长刻蚀时间。
随着刻蚀时间的增加，多孔硅孔隙率增加，拉伸应力进一步增加。
With the increasing of time, the porosity of porous silicon also increases.
同时给出了刻蚀深度与脉冲速率及脉冲时间的实验曲线。
Experimental curves of etching depth versus repeated rate and radiation time of laser pulse are given.
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