基于此解析式，讨论了分布栅电阻和内部沟道电阻对噪声性能的影响。
Based on this formula, the impacts of distributed gate resistance and intrinsic channel resistance on noise performance are discussed.
内部P沟道功率MOS，线圈，电容和外接二极管此外，这些IC可以作为降压开关稳压器 。
With the addition of an internal P-channel Power MOS, a coil, capacitors, and a diode connected externally, these ICs can function as step-down switching regulators.
实验结果表明，随着晶体管沟道长度的减小，内部节点电容对功耗恒定特性的作用逐渐减小，DDCVSL与SABL具有相近的防DPA攻击特性。
The experimental results demonstrate that DDCVSL and SABL all have a high DPA-resistance with the shrinking channel-length of the transistors.
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